Alternatively excessive voltage can damage the collector base junction. This parameter is important because some leakage current will flow between collector and base, causing the part to heat up. This value should not be exceeded in the operation of the circuit. It is the maximum collector base voltage - again it is generally measured with the emitter left open circuit. V CBO: This parameter is the collector to base breakdown voltage of a bipolar transistor.Silicon offers good overall performance with a base emitter junction turn on voltage of around 0.6 volts - it is 0.2 to 0.3 volts for germanium. As it is used for many other semiconductor devices, there are many benefits of scale and technology available. Although other materials like germanium and gallium arsenide are available, silicon is the most popular because it is cheaper to process and in addition to this, the processes are more advanced than for other materials. Material: The main type of material used for semiconductor devices is silicon.The basic circuits for NPN transistors also fit well with the negative earth normally used in DC systems. Like for like they offer better performance than PNP transistors because electrons are the majority carriers and their mobility is higher than that of holes which are the majority carriers in PNP transistors.
The NPN transistors are more widely used. It is important to choose the correct type otherwise all the circuit polarities will be wrong.
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